* Low on-resistance RDS (on) = 38 mΩ typ. (at VGS = 4.5 V)
* Low drive current.
* High density mounting
* 1.8 V gate drive devices. Outline RENESAS Packa.

Silicon N-Channel Power MOSFET

HAT2200R

HAT2200WP

HAT2201R

HAT2201WP

HAT2202C

HAT2203C

HAT2204C

HAT2206C

HAT2207C

HAT2208R

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